ultra-fast perpendicular spin-orbit torque mram
| Description | |
| Date | 2018 |
| Date | |
| Auteurs | Cubukcu,- M | Boulle,- O | Mikuszeit,- N | Hamelin,- C | Bracher,- T | Lamard,- N | Cyrille,- M-c | Buda-prejbeanu,- L | Garello,- K | Miron,- Im | Klein,- O | De loubens,- G | Naletov,- Vv | Langer,- J | Ocker,- B | Gambardella,- P | Gaudin,- G | |
| Source | IEEE Transactions on Magnetics Volume 54 Issue 4 |
| Résumé | We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications. © 1965-2012 IEEE. |
| DOI | http://dx.doi.org/10.1109/TMAG.2017.2772185 |
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